DocumentCode
3489622
Title
An analytical model for intrinsic carbon nanotube FETs
Author
Wei, Lan ; Frank, David J. ; Chang, Leland ; Wong, H. S Philip
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
222
Lastpage
225
Abstract
A simple and efficient model of carbon nanotube field effect transistor (CNFET) is necessary to perform system-level optimization. In this paper, an analytical model with no iteration or integration is developed, including an analytical electrostatic model for the surface potential and simplification of scattering effects. The model is computationally efficient, but includes essential physics such as DIBL effect and scattering.
Keywords
carbon nanotubes; field effect transistors; surface potential; C; carbon nanotube FET; electrostatic model; field effect transistor; scattering effects; surface potential; system-level optimization; Analytical models; CMOS technology; Circuits; Computational modeling; Electrostatic analysis; Parasitic capacitance; Particle scattering; Physics; Quantum capacitance; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location
Edinburgh
ISSN
1930-8876
Print_ISBN
978-1-4244-2363-7
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2008.4681738
Filename
4681738
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