Title :
An analytical model for intrinsic carbon nanotube FETs
Author :
Wei, Lan ; Frank, David J. ; Chang, Leland ; Wong, H. S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Abstract :
A simple and efficient model of carbon nanotube field effect transistor (CNFET) is necessary to perform system-level optimization. In this paper, an analytical model with no iteration or integration is developed, including an analytical electrostatic model for the surface potential and simplification of scattering effects. The model is computationally efficient, but includes essential physics such as DIBL effect and scattering.
Keywords :
carbon nanotubes; field effect transistors; surface potential; C; carbon nanotube FET; electrostatic model; field effect transistor; scattering effects; surface potential; system-level optimization; Analytical models; CMOS technology; Circuits; Computational modeling; Electrostatic analysis; Parasitic capacitance; Particle scattering; Physics; Quantum capacitance; Semiconductor device modeling;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681738
