Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs

Author

Huet, K. ; Feraille, M. ; Rideau, D. ; Delamare, R. ; Aubry-Fortuna, V. ; Kasbari, M. ; Blayac, S. ; Rivero, C. ; Bournel, A. ; Tavernier, C. ; Dollfus, P. ; Jaouen, H.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris Sud, Orsay

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

234

Lastpage

237

Abstract

A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the <110>, <-110> and <100> directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.

Keywords

MOSFET; Poisson equation; k.p calculations; Kubo-Greenwood formalism; fully self-consistent Poisson-kp-Schrodinger scheme; hole transport; quantum confinement; strained inversion layers; uniaxial stress; uniaxially strained pMOSFET; wafer bending; CMOS technology; Capacitive sensors; Carrier confinement; MOS devices; MOSFETs; Piezoresistance; Silicon; Strain measurement; Stress measurement; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Conference_Location

Edinburgh

ISSN

1930-8876

Print_ISBN

978-1-4244-2363-7

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2008.4681741

Filename

4681741