Integrity of gate oxide on TFSOI materials

Author

Hong, S.O. ; Wetteroth, T. ; Shin, H. ; Wilson, S.R. ; Huang, W.M. ; Foerstner, J. ; Racanelli, M. ; Shin, H.C. ; Hwang, B.Y. ; Schroder, D.K.

Author_Institution

Mater. Res. & Strategic Technol., Motorola Semicond. Products Sector, Mesa, AZ, USA

fYear

1995

fDate

3-5 Oct 1995

Firstpage

22

Lastpage

23

Abstract

The quality of gate oxides on Thin-Film-Silicon-On-Insulator (TFSOI) substrates is essential for the development of TFSOI technologies. Compared with the extensive work on device characterization and circuit performance, however, data in this area are still limited. This paper presents a gate oxide integrity (GOI) study on both SIMOX (Separation-by-IMplantation-of-OXygen) and BESOI (Bonded-Etched-back-SOI) substrates. The effect of wafer polishing to reduce the initial surface micro-roughness is also discussed

Keywords

SIMOX; polishing; semiconductor thin films; silicon-on-insulator; BESOI substrates; SIMOX substrates; TFSOI materials; gate oxide integrity; surface micro-roughness; wafer polishing; Capacitors; Circuit optimization; Design for quality; Electric breakdown; Pollution measurement; Semiconductor materials; Substrates; Surface contamination; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526441

Filename

526441