DocumentCode
3489799
Title
Simulation of intravalley acoustic phonon scattering in silicon nanowires
Author
Frey, Martin ; Esposito, Aniello ; Schenk, Andreas
Author_Institution
IIS Integrated Syst. Lab., ETH Zurich, Zurich
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
258
Lastpage
261
Abstract
In this paper, the influence of intravalley acoustic phonon scattering on transport through silicon nanowires is studied. The focus lies on a comparison of the full problem with approximate methods regarding the self-consistent electrostatics and current computation. In addition, the scaling behavior with increasing device lengths is shown.
Keywords
elemental semiconductors; nanowires; phonons; semiconductor quantum wires; silicon; Si; approximate methods; device lengths; intravalley acoustic phonon scattering; scaling behavior; self-consistent electrostatics; silicon nanowires; Acoustic scattering; Equations; Green´s function methods; Hydrogen; Laboratories; Nanowires; Particle scattering; Phonons; Silicon; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location
Edinburgh
ISSN
1930-8876
Print_ISBN
978-1-4244-2363-7
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2008.4681747
Filename
4681747
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