Title :
Gettering layer formation in low-dose SIMOX wafers
Author :
Jablonski, J. ; Saito, M. ; Imai, M. ; Nakashima, S.
Author_Institution :
Komatsu Electron. Metals Co. Ltd., Kanagawa, Japan
Abstract :
The mechanism of SFT generation in low-dose SIMOX wafers was analyzed. It was found that generation of these microdefects inside the top Si layer is strongly suppressed in comparison with those in the BOX. Moreover, both processes occur at different stages of high temperature annealing and thus can be controlled by the proper optimization of annealing conditions. As a result, it seems possible to produce SIMOX wafers with a defect-free top Si film and a gettering layer located beneath the BOX
Keywords :
SIMOX; annealing; getters; stacking faults; BOX; SFT generation; SIMOX wafers; Si film; Si-SiO2; gettering; high temperature annealing; microdefects; Annealing; Application specific integrated circuits; Gettering; Impurities; Inorganic materials; Integrated circuit synthesis; Integrated circuit technology; Process control; Silicon on insulator technology; Stacking;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526447
