Title :
Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling
Author :
Min, Kyeong-Sik ; Lee, Kwyro
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
In this paper, we propose a newly developed subthreshold slope (ideality factor) model, whose parameters are solely determined from the threshold voltage data. We succeed to express the ideality factor in terms of the threshold voltage parameters obtained from the body and DIBL effects, which can take care of its dependence on the process data
Keywords :
MOSFET; semiconductor device models; DIBL effect; MOSFET; body effect; ideality factor; statistical model; subthreshold slope; threshold voltage parameters; Capacitance; Circuit simulation; Doping profiles; Length measurement; MOSFET circuits; Power dissipation; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616450
