Title :
An advanced 0.5 μm CMOS/SOI technology for practical ultrahigh-speed and low-power circuits
Author :
Ipposhi, T. ; Iwamatsu, T. ; Yamaguchi, Yoshio ; Ueda, K. ; Morinaka, H. ; Mashiko, K. ; Inoue, E. ; Hirao, T.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Thin-film SOI MOSFETs offer high-speed and low-power characteristics due to reduced junction capacitance and reduced back-gate-bias effect. Therefore, thin SOI devices have been considered to be candidates for element transistor structures used in high-speed and low-power CMOS LSIs. In order to proceed to the stage of commercial application, it is necessary to demonstrate the effectiveness of SOI devices in various kinds of practical circuits. In this paper, we report an advanced 0.5 μm CMOS/SOI technology and demonstrate ultrahigh-speed and low-power operation in two kinds of typical circuits: frequency divider and adder
Keywords :
CMOS integrated circuits; adders; frequency dividers; integrated circuit technology; silicon-on-insulator; very high speed integrated circuits; 0.5 micron; CMOS/SOI technology; LSIs; adder; back-gate-bias; frequency divider; junction capacitance; thin-film SOI MOSFETs; ultrahigh-speed low-power circuits; Adders; CMOS technology; Capacitance; Circuits; Delay effects; Energy consumption; Frequency conversion; Laboratories; MOS devices; Microprocessors;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526453
