DocumentCode
3490032
Title
Coupling effects in high-resistivity SIMOX substrates for VHF and microwave applications
Author
Raskin, J.P. ; Vanhoenacker, D. ; Colinge, J.P. ; Flandre, D.
Author_Institution
Microwave Lab., Univ. Catholique de Louvain, Belgium
fYear
1995
fDate
3-5 Oct 1995
Firstpage
62
Lastpage
63
Abstract
The use of high-resistivity SIMOX substrates has been proposed to enable the integration of low-loss adapted lines for MMIC applications in SOI CMOS technology. In this work we investigate the impact of the substrate resistivity on another important substrate coupling effect: the intrinsic load impedance of active transistors in amplifier configuration, which conditions the device maximum stable frequency. Related device and line modelling aspects are also discussed
Keywords
CMOS integrated circuits; SIMOX; VHF circuits; field effect MMIC; substrates; MMIC; SOI CMOS technology; VHF applications; active transistors; amplifier; high-resistivity SIMOX substrates; load impedance; low-loss adapted lines; microwave applications; substrate coupling; CMOS technology; Capacitance; Conductivity; Dielectric losses; Dielectric substrates; Frequency response; Laboratories; MOS capacitors; MOSFETs; VHF circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526461
Filename
526461
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