Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization

Scaling the fin width in fully-depleted FinFETs can improve short channel effect control, but may be accompanied by a on-state drive current degradation. Ion implantation is a leading candidate as the means to introduce dopants into the silicon, but is often accompanied by amorphization when highly doped source-drain regions are formed. Thin-body silicon recrystallization after amorphization is not as straight-forward as bulk silicon. Crystalline integrity is worse as the fin width is scaled, thereby reducing dopant activation and increasing access resistance. In this work we demonstrate that non-amorphizing implant approaches can overcome drive degradation down to 10 nm wide fins in pMOS FinFETs.