• DocumentCode
    3490264
  • Title

    A high performance lateral bipolar transistor from a SOI CMOS process

  • Author

    Chan, Mansun ; Fung, Samuel K H ; Hu, Chenming ; Ko, Ping K.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    1995
  • fDate
    3-5 Oct 1995
  • Firstpage
    90
  • Lastpage
    91
  • Abstract
    A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme
  • Keywords
    MOSFET; bipolar transistors; semiconductor technology; silicon-on-insulator; SOI CMOS process; base contact; fabrication; lateral bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Contact resistance; Doping; Electrical resistance measurement; Electrodes; Electron emission; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1995. Proceedings., 1995 IEEE International
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    0-7803-2547-8
  • Type

    conf

  • DOI
    10.1109/SOI.1995.526475
  • Filename
    526475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3490264