• DocumentCode
    3490298
  • Title

    Tantalum-gate SOI MOSFET´s featuring excellent threshold voltage control in low-power applications

  • Author

    Shimada, H. ; Ushiki, T. ; Hirano, Y. ; Ohmi, T.

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    1995
  • fDate
    3-5 Oct 1995
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    In this paper it is successfully demonstrated that Ta-gate SOI MOSFETs have excellent threshold voltage control in 1V applications
  • Keywords
    MOSFET; silicon-on-insulator; tantalum; 1 V; Ta; low-power applications; tantalum-gate SOI MOSFETs; threshold voltage control; Chemicals; Conductivity; Etching; Impurities; Ion implantation; MOSFET circuits; Oxidation; Thickness control; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1995. Proceedings., 1995 IEEE International
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    0-7803-2547-8
  • Type

    conf

  • DOI
    10.1109/SOI.1995.526478
  • Filename
    526478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3490298