Transient effects in floating body SOI NMOSFETs

The consequence of floating body operation of SOI devices is the existence of several phenomena, like the kink effect and supra ideal subthreshold slope. In this paper, we report the associated transient effects observed for fast gate pulses by high speed measurements and 2-D numerical simulations. It is shown that due to floating body operation, the drain current of SOI devices during fast switching is very different from the DC value. This must be taken into account for accurate simulation of circuits