Wire bonding capillary profile and bonding process parameter optimization simulation

Author

Qian, Qiuxiao ; Liu, Yong ; Luk, Timwah ; Irving, Scott

Author_Institution

Fairchild Semicond. Corp., South Portland, ME

fYear

2008

fDate

20-23 April 2008

Firstpage

1

Lastpage

7

Abstract

In this paper, a methodology for wire bonding parameter modeling is developed, which considers the capillary, FAB and device on silicon. The impact of capillary profile and bonding process parameters which include ball diameter, bonding temperature and bond wire material properties are studied to optimize the wire bonding assembly process. Finally, the comparison of the results with and without the modeling optimization shows that the probability of bonding failure is reduced after the wire bonding process is optimized.

Keywords

lead bonding; ball diameter; bond wire material properties; bonding failure; bonding process parameter optimization simulation; bonding temperature; device on silicon; wire bonding capillary profile; Assembly; Bonding forces; Bonding processes; Circuit testing; Frequency; Material properties; Silicon; Stress; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on

Conference_Location

Freiburg im Breisgau

Print_ISBN

978-1-4244-2127-5

Electronic_ISBN

978-1-4244-2128-2

Type

conf

DOI

10.1109/ESIME.2008.4525066

Filename

4525066