Multi-Gate MOSFET Design

Author

Knoblinger, G. ; Pacha, C. ; Kuttner, F. ; Marshall, A. ; Russ, C. ; Haibach, P. ; Patruno, P. ; Schulz, T. ; Arnim, K.V. ; Engelstaedter, J.P. ; Bertolissi, L. ; Xiong, W. ; Cleavelin, C.R. ; Schruefer, K.

Author_Institution

Infineon Technol. Austria, Villach

fYear

2006

fDate

Sept. 2006

Firstpage

66

Lastpage

69

Abstract

In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered

Keywords

MOSFET; electrostatic discharge; network synthesis; MuGFET; circuit design; digital circuits; electrostatic discharge; midgap gate electrode materials; multigate MOSFET design; multigate field effect transistors; Analog circuits; Circuit synthesis; Conducting materials; Digital circuits; Electrodes; Electrostatic discharge; FETs; Heating; MOSFET circuits; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307532

Filename

4099705