Title :
Are NV-memories non-volatile?
Author :
Ratchev, Dimitre
Author_Institution :
Reliability Lab, Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Some results from qualification test procedures on 64 k (4 designs) and 256 k (4 designs) EEPROM as well as 1 M (4 designs) flash memories are presented. Electrical characterization, various environmental tests, and reliability tests on up to about 220 devices per design were performed. Different defect and failed devices were detected and failure analysis (whenever possible) was accomplished. The results indicate enhancements of the quality and reliability of newer NV-memory generations but the levels of other standard memories (DRAM, SRAM) are not reached yet
Keywords :
EPROM; circuit reliability; environmental testing; failure analysis; integrated circuit testing; integrated memory circuits; 1 Mbit; 256 kbit; 64 kbit; EEPROM; electrical characterisation; environmental tests; failure analysis; flash memories; nonvolatile memories; qualification test procedures; reliability tests; EPROM; Electrostatic discharge; Failure analysis; Performance evaluation; Personal communication networks; Qualifications; Random access memory; Redundancy; Temperature; Testing;
Conference_Titel :
Memory Testing, 1993., Records of the 1993 IEEE International Workshop on
Conference_Location :
San Jose, CA
Print_ISBN :
0-8186-4150-9
DOI :
10.1109/MT.1993.263141
