Title :
Investigation of drain electric field and its role in impact ionization in SOI MOSFETs
Author :
Ng, Chi-Man ; Nguyen, Chuong T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Honk Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Despite the increasing importance of energy-balance over drift-diffusion modelling in submicron devices, particularly in impact ionization calculations, we have found that the El-Mansy/Ko model can still be applied with appropriate modifications. This is important because it allows for a simple empirical calculation to provide physical insight for device design
Keywords :
MOSFET; doping profiles; electric fields; impact ionisation; semiconductor device models; silicon-on-insulator; El-Mansy/Ko model; SOI MOSFETs; Si; drain electric field; impact ionization; submicron devices; Appropriate technology; Doping profiles; Electric breakdown; FETs; Feedback; Impact ionization; MOSFETs; Power engineering and energy; Predictive models; Semiconductor process modeling;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616454
