Fully depleted dual-gated thin-film SOI p-MOSFET with an isolated buried polysilicon backgate

Author

Denton, P. ; Neudeck, G.W.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1995

fDate

3-5 Oct 1995

Firstpage

135

Lastpage

136

Abstract

A p-channel Dual-Gated Thin-Film Silicon-on-insulator (DG-TFSOI) MOSFET has been fabricated with an isolated buried polysilicon backgate and is in a SOI island. This structure allows individual operation of each backgate of each device, rather than the present common backgate (substrate) structure. The ability to use a individual buried gate to dynamically shift the threshold voltage of each individual top MOSFET may have significant implications for low power circuits and offers a way to boost drive currents for faster switching. By using Epitaxial Lateral Overgrowth (ELO) the bottom thermal buried oxide can be specified to any thickness

Keywords

MOSFET; buried layers; silicon; silicon-on-insulator; thin film transistors; ELO; Si-SiO₂; dual-gated structure; epitaxial lateral overgrowth; fully depleted SOI MOSFET; isolated buried polysilicon backgate; low power circuits; p-channel device; thermal buried oxide; thin-film SOI p-MOSFET; threshold voltage shifting; Density measurement; Fabrication; MOSFET circuits; Oxidation; Silicon; Substrates; Thickness control; Threshold voltage; Transconductance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526497

Filename

526497