Title :
Termocompensation of tensoresistive sensors using bipolar junction transistor in extended temperature range
Author :
Gridchinv, A. ; Antonov, A.A.
Abstract :
This article represents the results of mathematical modeling of thermocompensation scheme using bipolar junction transistor. Also it represents the result of temperature testing by experimental model in extended temperature range 25-2500C. It was shown that practical realization of this thermocompensation scheme is real for temperature up to 2500C and this method is capable of minimization temperature dependence of bridge output by ~ 0,05-K),015%/0C.
Keywords :
bipolar transistors; compensation; resistors; temperature sensors; bipolar junction transistor; extended temperature range; mathematical modeling; minimization temperature dependence; temperature 25 degC to 2500 degC; temperature testing; tensoresistive sensors; termocompensation scheme; Junctions; Mathematical model; Silicon; Temperature distribution; Temperature sensors; Transistors;
Conference_Titel :
Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4673-2842-5
DOI :
10.1109/APEIE.2012.6628918
