A 65-nm CMOS 8-GHz injection locked oscillator for HDR UWB applications

Author

Toupé, Romaric ; Deval, Yann ; Badets, Franck ; Bégueret, Jean-Baptiste

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

106

Lastpage

109

Abstract

In this paper, an 8 GHz 16^th sub-harmonic injection-locked oscillator based on LC-oscillators and pulse generators is presented. It has been fully implemented in a VLSI 65 nm CMOS technology from STMicroelectronics and is dedicated to a double-loop frequency synthesizer. Under a nominal power supply of 1.2 V, the ILO core dissipates 20mA (without buffers) for a measured phase noise of -107 dBc/Hz at 100 kHz offset from the 8 GHz carrier. It also provides a synchronization bandwidth of 350 MHz, thanks to a double synchronization network.

Keywords

CMOS analogue integrated circuits; VLSI; field effect MMIC; frequency synthesizers; injection locked oscillators; pulse generators; ultra wideband communication; CMOS technology; HDR UWB applications; LC-oscillators; STMicroelectronics; VLSI; double synchronization network; double-loop frequency synthesizer; frequency 8 GHz; pulse generators; size 65 nm; sub-harmonic injection-locked oscillator; CMOS technology; Frequency synchronization; Frequency synthesizers; Injection-locked oscillators; Noise measurement; Phase measurement; Power measurement; Power supplies; Pulse generation; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European

Conference_Location

Edinburgh

ISSN

1930-8833

Print_ISBN

978-1-4244-2361-3

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2008.4681803

Filename

4681803