Scattering of the holes in isotropic polycrystalline silicon and the calculation of effective masses of the charge carriers

Author

Moiseev, A.G.

fYear

2012

fDate

2-4 Oct. 2012

Firstpage

69

Lastpage

70

Abstract

The Hamiltonian formulation for the process of the scattering of holes on the crystallite misorientations in isotropic polycrystalline silicon is described. This approach allows for the description of different scattering transitions: light holes to light holes, heavy holes to heavy holes, light holes to heavy holes, and heavy holes to light holes. The estimation of mass spectrum of holes and the calculation of the scattering probability of the holes on the crystallite misorientations in isotropic polycrystalline silicon are performed.

Keywords

carrier density; crystallites; effective mass; elemental semiconductors; hole mobility; silicon; Hamiltonian formulation; Si; charge carrier; crystallite misorientation; effective mass; heavy holes; hole scattering probability; isotropic polycrystalline silicon; light holes; mass spectrum estimation; scattering transitions; Charge carriers; Cyclotrons; Effective mass; Estimation; Quantum mechanics; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Actual Problems of Electronics Instrument Engineering (APEIE), 2012 11th International Conference on

Conference_Location

Novosibirsk

Print_ISBN

978-1-4673-2842-5

Type

conf

DOI

10.1109/APEIE.2012.6628934

Filename

6628934