“Smart cut”: a promising new SOI material technology

Author

Bruel, M. ; Aspar, B. ; Charlet, B. ; Maleville, C. ; Poumeyrol, T. ; Soubie, A. ; Auberton-Herve, A.J. ; Lamure, J.M. ; Barge, T. ; Metral, F. ; Trucchi, S.

Author_Institution

LETI, CEN, Grenoble, France

fYear

1995

fDate

3-5 Oct 1995

Firstpage

178

Lastpage

179

Abstract

Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (≈1.5 V) and will play a major role in ULSI developments. Today two SOI material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI material technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the “IMPROVE” (IMplanted PROtons Voids Engineering) process and is henceforth referred to as “Smart-cut”. The process is implemented for fabrication of Unibond wafers

Keywords

ULSI; ion implantation; silicon-on-insulator; wafer bonding; IMPROVE process; LV low-power technologies; SOI material technology; Si; Smart cut; Unibond wafer fabrication; bonding technique; implanted protons voids engineering process; ion implantation step; very thin SOI film; Boats; Etching; Hydrogen; Ion implantation; Materials science and technology; Oxygen; Silicon on insulator technology; Surface topography; Ultra large scale integration; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526518

Filename

526518