High voltage characteristics of polycrystalline silicon conductivity modulated thin film transistors

Author

Anish Kumar, K.P. ; Sin, Johnny K O ; Poon, M.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1996

fDate

26-28 Nov 1996

Firstpage

78

Lastpage

81

Abstract

This paper presents the high voltage characteristics of the conductivity modulated thin film transistor (CMTFT). The effects of the offset region doping on the performance of the CMTFT at high voltage was investigated. The CMTFT devices with a breakdown voltage of 100 V are obtained experimentally. It is shown that the offset region doping increases the current drive and reduces the forward voltage drop of the high voltage CMTFT at the expense of a small degradation in the leakage current and breakdown voltage. Better trade-off between current drive and leakage current can be obtained by optimizing the injection efficiency of the p⁺ anode of the transistor

Keywords

MISFET; doping profiles; electric breakdown; elemental semiconductors; leakage currents; silicon; thin film transistors; 100 V; HV characteristics; MISFET; Si; anode injection efficiency optimisation; breakdown voltage; conductivity modulated TFT; current drive; forward voltage drop; high voltage characteristics; leakage current; offset region doping; p⁺ anode; polycrystalline Si TFT; polysilicon TFT; thin film transistors; Conductivity; Doping; Glass; Implants; Leakage current; Liquid crystal displays; Silicon compounds; Substrates; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on

Conference_Location

Penang

Print_ISBN

0-7803-3388-8

Type

conf

DOI

10.1109/SMELEC.1996.616456

Filename

616456