Title :
A low-power high performance 4GHz SiGe HBT VCO
Author :
Khalil, Ahmed I. ; Katzin, Peter
Author_Institution :
Hittite Microwave Corp., Chelmsford, MA, USA
Abstract :
This paper reports the lowest VCO phase noise achieved using SiGe HBT process at 4GHz. Te SiGE HBT devices have an fT of 47GHz. The differential LC-tuned VCO operates over the voltage range 2.7 to 3.3 supply voltage. It has a 4.2GHz center frequency, 13% tuning range, -106 dBc/Hz at 100KHz offset and -128 dBc/Hz at 1MHz offset. The core power dissipation is 26mW from a 3.3 V supply. A high figure of merit (-186.35) is also achieved. The die area, including buffers and bond pads, is 1 mm2.
Keywords :
heterojunction bipolar transistors; integrated circuit noise; low-power electronics; microwave integrated circuits; phase noise; silicon compounds; voltage-controlled oscillators; 1 MHz; 100 KHz; 2.7 to 3.3 V; 26 mW; 4 GHz; 4.2 GHz; 47 GHz; SiGe; SiGe HBT; differential LC-tuned VCO; high performance HBT VCO; low-power HBT VCO; phase noise; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Power dissipation; Silicon germanium; Tellurium; Tuning; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338860
