Process optimization the growth of GaP epitaxial layer on 2° GaAs substrate

Author

Ni, Qinfei ; Qiu, Zhongyang ; Yu, Bin ; Liu, Xuezhen ; Zhang, Tiancheng ; Wang, Yuxia

Author_Institution

State Key Lab. of High Power Semicond. Laser, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

1

Lastpage

4

Abstract

GaP epitaxial layer was prepared by planetary MOVCD on 2°GaAs substrate. Use the XRD (X-ray diffraction) to test the full width at half maximum (FWHM) of rocking-curve and use the high power microscope to watch the crystal surface quality. Summary the growth condition of high-quality GaP epitaxial layer. The results show that the surface quality depends on high growth temperature and slow growth velocity. Perfect surface was obtained when the thickness that grow GaP epitaxial layer in low temperature and slow velocity is 20nm.

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; epitaxial growth; gallium compounds; semiconductor epitaxial layers; semiconductor growth; surface morphology; 2° GaAs substrate; FWHM; GaAs; GaP; X-ray diffraction; XRD; crystal surface quality; full width at half maximum; growth temperature; growth velocity; high power microscopy; high-quality epitaxial layer growth; perfect surface; planetary MOVCD; process optimization; rocking-curve; Crystals; Epitaxial layers; Gallium arsenide; Morphology; Substrates; Surface morphology; Surface treatment; 2°; GaAs; GaP; MOCVD; XRD;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316201

Filename

6316201