CVD of electronical and optical structures

For the last ten years there is a steady increase from 2" to 6" technology for the GaAs material system. These wafer sizes are required for device technologies like HEMT, HBT, VCSEL, LED, solar cells, photocathodes as well as integrated technologies like ICs or MMICs. The latter is influencing the demand for equipment for 6" mass production growth technology. Today, commercially available MOVPE for growth of 95×2" or 25×4" wafers are on the market. As a mass production technology MOVPE fulfils the objective of not only growing high quality films with excellent uniformities, which results in high yields on wafer, but also growing with high precursor utilization efficiency and wafer throughput. Under these aspects, this paper introduces a new 9×6" MOVPE technology based on the fact that today at least three substrate manufacturers offer 6" GaAs wafers for electronic device applications