Study on neutral sulphur passivation of gallium antimonide surface

Author

An, Ning ; Liu, Guojun ; Wei, Zhipeng ; Deng, Rui ; Fang, Xuan ; Gao, Xian ; Zou, Yonggang ; Li, Mei ; Ma, Xiaohui

Author_Institution

Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

25

Lastpage

29

Abstract

We here report a new passivation method, with neutral sulphur, (NH4)2S, to modify the GaSb surface. The optical and chemical properties of GaSb surface before and after neutral passivation are investigated using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) mapping. Neutral (NH4)2S passivation led to 20 times enhancement in photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than the untreated sample. The passivtion effect results from the significant reduction in surface states due to the formation of Ga and Sb sulfide species. Compared to the regular alkaline (NH4)2S treatment, surface passivation intensity and homogeneity are both improved. Our studies also indicate the neutral sulphur passivation treated surface is much more stable in air for at least 48h.

Keywords

III-V semiconductors; X-ray photoelectron spectra; gallium compounds; passivation; photoluminescence; spectral line intensity; surface morphology; surface states; GaSb; GaSb surface; PL intensity enhancement; X-ray photoelectron spectroscopy; XPS; chemical properties; gallium antimonide surface; neutral sulphur passivation; optical properties; oxide content; photoluminescence; sulfide species; surface passivation homogeneity; surface passivation intensity; surface states; Chemicals; Gallium; Passivation; Photoluminescence; Surface cleaning; Surface morphology; GaSb surface passivation; PL; XPS; neutral (NH4)2S;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316207

Filename

6316207