Title :
The enhanced optical property of chemical passivated n type GaSb
Author :
Wang, Bo ; Zhipengwei ; Li, Mei ; Fang, Xuan ; Deng, Rui ; Gao, Xian ; Zou, Yonggang ; Lu, Peng ; Liu, Guojun ; Ma, Xiaohui
Author_Institution :
Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
In the paper, Te-doped n type GaSb was passivated by (NH4)2S, the optical and surface properties of passivated GaSb were investigated by PL and AFM. After passivation treatment, the luminescence intensity of GaSb was enhanced. The passivation time would also affect luminescence intensity and the surface smooth of GaSb.
Keywords :
III-V semiconductors; atomic force microscopy; gallium compounds; passivation; photoluminescence; spectral line intensity; surface structure; tellurium; AFM; GaSb:Te; PL measurements; chemical passivated n type GaSb; luminescence intensity; optical properties; passivation time; smooth surface; surface properties; Optical surface waves; Passivation; Photoluminescence; Rough surfaces; Temperature measurement; n-GaSb; photoluminescence; sulfuration passivation;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316208
