DocumentCode
3491133
Title
A 71–73 GHz voltage-controlled standing-wave oscillator in 90 nm CMOS technology
Author
De Paola, Francesco M. ; Genesi, Raffaella ; Manstretta, Danilo
Author_Institution
Electron. Dept., Univ. of Pavia, Pavia
fYear
2008
fDate
15-19 Sept. 2008
Firstpage
254
Lastpage
257
Abstract
In this contribution we present a standing-wave voltage controlled oscillator that is suitable for operation in the lower licensed E-band (i.e., 71-73 GHz). Frequency tuning is achieved by periodically loading a shielded differential transmission with inversion-mode varactors. An output buffer is introduced to facilitate on-chip probing. The oscillator is implemented in 90 nm CMOS technology. The core power consumption is 19 mW from a 1.2 V supply and area occupation is 120 times 80 mum2. For a 72 GHz frequency, the oscillator exhibits a measured phase noise of -112.2 dBc/Hz at 10 MHz. The resulting figure-of-merit is -176.5 dBc/Hz.
Keywords
CMOS integrated circuits; circuit tuning; field effect MIMIC; varactors; voltage-controlled oscillators; CMOS technology; frequency 71 GHz to 73 GHz; frequency tuning; inversion-mode varactor; lower licensed E-band; on-chip probing; output buffer; power 19 mW; shielded differential transmission; size 90 nm; voltage 1.2 V; voltage-controlled standing-wave oscillator; Bars; CMOS technology; Circuits; Frequency; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Transmission line theory; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location
Edinburgh
ISSN
1930-8833
Print_ISBN
978-1-4244-2361-3
Electronic_ISBN
1930-8833
Type
conf
DOI
10.1109/ESSCIRC.2008.4681840
Filename
4681840
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