The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts

Author

Liu, Xiaoxuan ; Wei, Zhipeng ; Fang, Xuan ; Chu, Xueying ; Wang, Yong ; Liu, Quansheng ; Zou, Yonggang ; Li, Mei ; Liu, Guojun ; Ma, Xiaohui ; Li, Yongfeng

Author_Institution

Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

35

Lastpage

37

Abstract

Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/ semiconductor contacts, and these contacts are quickly annealed at 200°C-400°C in the ambient gas of N₂. It is found that these contacts show rectifying Schottky behavior by I-V measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.

Keywords

III-V semiconductors; Schottky barriers; annealing; gallium compounds; gold; leakage currents; metallic thin films; rectification; semiconductor-metal boundaries; tellurium; Au film; Au-GaSb:Te; I-V measurement; Schottky contacts; ambient gas; annealing temperature; barrier height; electrical properties; ideality factor; leakage current; metal-semiconductor contacts; rectifying Schottky behavior; size 200 nm; temperature 200 degC to 400 degC; Annealing; Films; Gold; Schottky barriers; Schottky diodes; Temperature; annealing temperature; electric character; schottky barrier;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316209

Filename

6316209