Title :
The effect of annealing temperature on electrical properties of Au/n-GaSb Schottky contacts
Author :
Liu, Xiaoxuan ; Wei, Zhipeng ; Fang, Xuan ; Chu, Xueying ; Wang, Yong ; Liu, Quansheng ; Zou, Yonggang ; Li, Mei ; Liu, Guojun ; Ma, Xiaohui ; Li, Yongfeng
Author_Institution :
Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
Au film (200nm) is deposited on Te doped n-GaSb grown to form metal/ semiconductor contacts, and these contacts are quickly annealed at 200°C-400°C in the ambient gas of N2. It is found that these contacts show rectifying Schottky behavior by I-V measurement. The characteristic of the contact is improved when annealed under the appropriate temperature. It leaded to increase the barrier height and reduce both the ideality factor and the leakage current.
Keywords :
III-V semiconductors; Schottky barriers; annealing; gallium compounds; gold; leakage currents; metallic thin films; rectification; semiconductor-metal boundaries; tellurium; Au film; Au-GaSb:Te; I-V measurement; Schottky contacts; ambient gas; annealing temperature; barrier height; electrical properties; ideality factor; leakage current; metal-semiconductor contacts; rectifying Schottky behavior; size 200 nm; temperature 200 degC to 400 degC; Annealing; Films; Gold; Schottky barriers; Schottky diodes; Temperature; annealing temperature; electric character; schottky barrier;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316209
