Title :
The optical characterization of GaSb treatment by sodium sulfide solution
Author :
Lang, Yue ; Wei, Zhipeng ; Zou, Yonggang ; Li, Mei ; Hao, Yongqin ; Li, Zhanguo ; Liu, Guojun ; Ma, Xiaohui ; Li, Jinhua ; Fang, Xuan ; Fang, Fang ; Tian, Shanshan
Author_Institution :
Nat. Key Lab. of High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
In this paper, the oxide layer of surface of GaSb could be removed by passivation solution. Moreover, different passivation solution have different passivation effect. After passivation treatment, the PL intensity was enlarged. Then the influence of prove passivation time on the intensity of PL was also discussed. When passivation time was 270s, the sample´s intensity of PL was the strongest. Additionally, this passivation treatment could improve the whole substrate´s PL intensity.
Keywords :
III-V semiconductors; gallium compounds; passivation; photoluminescence; spectral line intensity; GaSb; optical characterization; oxide layer; passivation solution; passivation treatment; sodium sulfide solution; substrate PL intensity; time 270 s; Chemicals; Corrosion; Microelectronics; Passivation; Rough surfaces; Surface roughness; Density of surface states; GaSb; PL; Sodium sulfide;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316210
