Influence of PH3 flow distribution on the growth of AlInP/GaInP distributed Bragg-reflector

Author

Tian, Yu ; Xu, Li ; Ma, Xiaohui ; Wei, Zhipeng ; Xue, Zhiwei ; Ma, Ziyue ; Han, Xiaoya ; Zhang, Shuangxiang ; Zhang, Yinqiao ; Zhao, Wei ; Sui, Qingxue ; Zhang, Zhimin

Author_Institution

State Key Lab. on High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

41

Lastpage

44

Abstract

AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; semiconductor epitaxial layers; AlInP-GaInP; DBR; MOCVD; PH3 flow distribution; distributed Bragg-reflector; epitaxial film homogeneity; fixed V/III ratio; layer uniformity; lower nozzle group; mixed gas flow velocity; upper nozzle group; Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Light emitting diodes; MOCVD; MOCVD; PH3 flow distribution; flow velocity; uniformity;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316211

Filename

6316211