Title :
Influence of PH3 flow distribution on the growth of AlInP/GaInP distributed Bragg-reflector
Author :
Tian, Yu ; Xu, Li ; Ma, Xiaohui ; Wei, Zhipeng ; Xue, Zhiwei ; Ma, Ziyue ; Han, Xiaoya ; Zhang, Shuangxiang ; Zhang, Yinqiao ; Zhao, Wei ; Sui, Qingxue ; Zhang, Zhimin
Author_Institution :
State Key Lab. on High-Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China
Abstract :
AlInP/GaInP distributed Bragg-reflector (DBRs) were prepared by MOCVD. Influences of the flow velocity and rate of mixed gas on homogeneity of epitaxial film were investigated systematically. Compared with the change of single group V source, the uniformity of AlInP/GaInP layers was significantly improved by changing simultaneously the distribution of upper and lower nozzle group in the fixed V/III ratio.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; semiconductor epitaxial layers; AlInP-GaInP; DBR; MOCVD; PH3 flow distribution; distributed Bragg-reflector; epitaxial film homogeneity; fixed V/III ratio; layer uniformity; lower nozzle group; mixed gas flow velocity; upper nozzle group; Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Light emitting diodes; MOCVD; MOCVD; PH3 flow distribution; flow velocity; uniformity;
Conference_Titel :
Optoelectronics and Microelectronics (ICOM), 2012 International Conference on
Conference_Location :
Changchun, Jilin
Print_ISBN :
978-1-4673-2638-4
DOI :
10.1109/ICoOM.2012.6316211
