A 90nm CMOS Low Noise Amplifier Using Noise Neutralizing for 3.1-10.6GHz UWB System

Author

Wang, Chao-Shiun ; Wang, Chorng-Kuang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei

fYear

2006

fDate

Sept. 2006

Firstpage

251

Lastpage

254

Abstract

This paper presents a wide-band low noise amplifier (LNA) using noise neutralizing technique for 3-10 GHz ultra-wideband (UWB) system. The thermal noise neutralizing method allows for the design of a low noise figure (NF) LNA and broadband input impedance matching without instability problems. Using the bandwidth enhancement networks, the flat passband gain can be achieved for 3-10GHz UWB system. The proposed LNA with on-chip matching network was fabricated in 90nm general propose digital CMOS process. The measured NF is below 6dB over 10GHz. Furthermore, the total power gain is 12dB, the input matching is better than -10dB, the -3dB bandwidth is from 2GHz to 12GHz, and the IIP3 is -4dBm. The LNA drains 14mA from a 1.2V supply and the die area is 0.8 times 0.87mm²

Keywords

CMOS integrated circuits; low noise amplifiers; microwave amplifiers; thermal noise; 0.8 mm; 0.87 mm; 1.2 V; 12 dB; 14 mA; 3.1 to 10.6 GHz; 90 nm; UWB system; broadband input impedance matching; digital CMOS process; low noise amplifier; on-chip matching network; thermal noise neutralization; wide-band LNA; Bandwidth; Broadband amplifiers; CMOS process; Impedance matching; Low-noise amplifiers; Network-on-a-chip; Noise figure; Noise measurement; Passband; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307578

Filename

4099751