Title :
A low-voltage mobility-based frequency reference for crystal-less ULP radios
Author :
Sebastiano, Fabio ; Breems, L. ; Makinwa, Kofi ; Drago, S. ; Leenaerts, D. ; Nauta, Bram
Author_Institution :
NXP Semicond., Eindhoven
Abstract :
The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm2 and draws 34 muA from a 1.2-V supply at room temperature.
Keywords :
CMOS integrated circuits; MOSFET circuits; electron mobility; integrated circuit design; low-power electronics; mobile radio; wireless sensor networks; MOS transistor; crystal less ULP radios; electron mobility; frequency 100 kHz; low voltage mobility based frequency reference; off-chip components; one point calibration; size 65 nm; temperature -22 degC to 85 degC; voltage 1.2 V; wireless sensor networks; CMOS technology; Calibration; Circuits; Energy consumption; Frequency; Oscillators; Silicon; Temperature distribution; Temperature sensors; Wireless sensor networks;
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2008.4681853
