A low-voltage mobility-based frequency reference for crystal-less ULP radios

Author

Sebastiano, Fabio ; Breems, L. ; Makinwa, Kofi ; Drago, S. ; Leenaerts, D. ; Nauta, Bram

Author_Institution

NXP Semicond., Eindhoven

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

306

Lastpage

309

Abstract

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3sigma) over the temperature range from -22degC to 85degC. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm² and draws 34 muA from a 1.2-V supply at room temperature.

Keywords

CMOS integrated circuits; MOSFET circuits; electron mobility; integrated circuit design; low-power electronics; mobile radio; wireless sensor networks; MOS transistor; crystal less ULP radios; electron mobility; frequency 100 kHz; low voltage mobility based frequency reference; off-chip components; one point calibration; size 65 nm; temperature -22 degC to 85 degC; voltage 1.2 V; wireless sensor networks; CMOS technology; Calibration; Circuits; Energy consumption; Frequency; Oscillators; Silicon; Temperature distribution; Temperature sensors; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European

Conference_Location

Edinburgh

ISSN

1930-8833

Print_ISBN

978-1-4244-2361-3

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2008.4681853

Filename

4681853