RF-performance of thick damascene Cu interconnect on silicon

Author

Van Noort, Wiho D. ; Detcheverry, C. ; Jansman, A.B.M. ; Verheijden, G. ; Bancken, P. ; Daamen, R. ; Nguyen, Viet ; Havens, R.J.

Author_Institution

Philips Res. Leuven, Belgium

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1643

Abstract

The performance of 2 μm thick damascene Cu lines embedded in low K material are evaluated. The process is well control over a 200 mm wafer, provided that tiling is used. A minimum linewidth of 560 nm is achieved. The RF performance of substrate and metal lines in the 1 - 100 GHz frequency range is investigated with coplanar waveguides. Various substrates were used with resistivities ranging from 3-5 Ω-cm to 4-5kΩ-cm. With a properly treated substrate, RF losses are only determined by AC series resistance of the metal lines yielding very low losses of 1.7 dB/cm at 10 GHz.

Keywords

coplanar waveguides; copper; electrical resistivity; integrated circuit interconnections; radiofrequency integrated circuits; substrates; 1 to 100 GHz; 2 microns; 200 mm; 530 nm; AC series resistance; Cu; RF losses; SiO₂; coplanar waveguides; damascene Cu interconnect; low K material; metal lines; substrate RF-performance; treated substrate; Conductivity; Coplanar waveguides; Copper; Dielectric substrates; Electric resistance; Electrical resistance measurement; Integrated circuit interconnections; Process control; Radio frequency; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338899

Filename

1338899