Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

Author

Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R.S. ; Pavlidis, D. ; Jansen, R.H. ; Neuburger, M. ; Schumacher, H.

Author_Institution

Res. & Technol., DaimlerChrysler AG, Ulm, Germany

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1657

Abstract

A power amplifier MMIC based on AlGaN/GaN HEMTs was fabricated and measured. The coplanar balanced amplifier consists of two 8×100μm transistors. Wilkinson splitters were used to divide and combine the power. BY biasing the amplifier at V_DS=30V a maximum CW output power of 39dBm corresponding to 5W/mm with a maximum power added efficiency (PAE) of 33.8% was achieved at 10GHz. Biasing the amplifier at V_DS=20V resulted in 36.7% PAE with 37.2dBm CW output power at 10GHz. To the author´s knowledge these results represent the highest output power density so far achieved for GaN-based MMICs at X-band in CW mode.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; 10 GHz; 20 V; 30 V; 33.8 percent; 36.7 percent; AlGaN; CW mode; GaN; GaN-based MMICs; MODFET integrated circuits; MODFET power amplifiers; Wilkinson splitters; X-band application; coplanar HEMT power amplifier MMIC; coplanar balanced amplifier; power added efficiency; power density; Aluminum gallium nitride; Frequency; Gallium arsenide; Gallium nitride; HEMTs; MMICs; MODFET integrated circuits; Microwave transistors; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338904

Filename

1338904