• DocumentCode
    349154
  • Title

    Electrostatic discharge protection circuits in CMOS ICs using the lateral SCR devices: an overview

  • Author

    Ker, Ming-Dou

  • Author_Institution
    Comput. & Commun. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
  • Volume
    1
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    325
  • Abstract
    An overview on the electrostatic discharge (ESD) protection circuits by using the lateral SCR devices in CMOS ICs is presented. The history of the lateral SCR devices used for on-chip ESD protection is introduced. The practical problem of using the SCR devices in the ESD protection circuits of CMOS ICs is also discussed. Such SCR devices have been found to be accidentally triggered on by the noisy pulses when the ICs are in the normal operating conditions. To overcome this problem, two solutions are proposed to safely apply the SCR devices for effective ESD protection in the CMOS ICs
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; protection; thyristors; CMOS IC; ESD protection circuits; electrostatic discharge protection; lateral SCR devices; onchip ESD protection; CMOS integrated circuits; CMOS technology; Clamps; Electrostatic discharge; Low voltage; MOS devices; Protection; Resistors; Stress; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 1998 IEEE International Conference on
  • Conference_Location
    Lisboa
  • Print_ISBN
    0-7803-5008-1
  • Type

    conf

  • DOI
    10.1109/ICECS.1998.813332
  • Filename
    813332