1.47 μm high characteristic temperature InGaAsP/InP MQW laser

Author

Chen, Weibo ; Li, Lin ; Zhao, Jinlong ; Wang, Yong ; Li, Te ; Lu, Peng ; Li, Mei ; Liu, GuoJun

Author_Institution

Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

115

Lastpage

118

Abstract

LASTIP software was applied to simulate symmetric and asymmetric InGaAsP/InP multi-quantum-well (MQW) laser diodes (LDs) emitting at about 1.47 μm. In order to obtain the laser with high-temperature characteristic, the tunnel layer and inner cladding layer was inserted in the laser structure. By comparing the two structures, we found that the tunnel injection (TI) structure can effectively reduce hot carrier effects, the TI asymmetric SCH MQW lasers have good temperature characteristics and smaller threshold current.

Keywords

III-V semiconductors; claddings; gallium arsenide; hot carriers; indium compounds; laser beams; quantum well lasers; tunnelling; InGaAsP-InP; LASTIP software; MQW LD; TI asymmetric SCH MQW lasers; TI structure; asymmetric multiquantum-well laser diodes; high characteristic temperature; hot carrier effects; inner cladding layer; laser structure; symmetric multiquantum-well laser diodes; threshold current; tunnel injection structure; tunnel layer; wavelength 1.47 mum; Laser theory; Power lasers; Quantum well devices; Semiconductor lasers; Temperature; Threshold current; 1.47 μm; High Characteristic Temperature; InGaAsP/InP; TI; asymmetric SCH MQW;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316230

Filename

6316230