The simulation analysis of GaInAsP/GaInP diode lasers emitting at 808 nm

Author

Gai, Kebin ; Li, Lin ; Zhao, Jinlong ; Wang, Yong ; Li, Te ; Lu, Peng ; Su, Chang ; Li, Zhanguo ; Liu, GuoJun

Author_Institution

Nat. Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2012

fDate

23-25 Aug. 2012

Firstpage

138

Lastpage

141

Abstract

The properties of the 808nm GaInAsP/GaInP quantum well structure lasers with asymmetric waveguide are numerically studied with a commercial LASTIP simulation program. The simulation results show that the laser performance of the 808nm GaInAsP/GaInP quantum well structure with asymmetric waveguide has a lower threshold current and higher slope efficiency, lower series resistance than symmetric waveguide the structure. Compared to symmetric structure, the lasers with asymmetric waveguide have a smaller band offset between waveguide and QW. These results indicate that a higher laser output power is obtained for the 808nmGaInAsP/GaInP quantum well structure with asymmetric waveguides.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; numerical analysis; quantum well lasers; waveguide lasers; GaInAsP-GaInP; asymmetric waveguide; band offset; commercial LASTIP simulation program; diode lasers; laser output power; laser performance; quantum well structure lasers; series resistance; slope efficiency; threshold current; wavelength 808 nm; Cavity resonators; Diode lasers; Integrated optics; Optical waveguides; Power lasers; Semiconductor lasers; Waveguide lasers; GaInAsP/GaInP quantum well; asymmetric waveguide; lastip simulate; semiconductor laser;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics (ICOM), 2012 International Conference on

Conference_Location

Changchun, Jilin

Print_ISBN

978-1-4673-2638-4

Type

conf

DOI

10.1109/ICoOM.2012.6316236

Filename

6316236