• DocumentCode
    3491644
  • Title

    Effects of backsurface Ar+ bombardment on n-MOSFET´s with nitrided gate oxides

  • Author

    Lai, P.T. ; Zeng, X. ; Li, G.Q. ; Ng, W.T.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1996
  • fDate
    26-28 Nov 1996
  • Firstpage
    93
  • Lastpage
    96
  • Abstract
    Low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of n-MOSFET´s with nitrided gate dielectric after the completion of all conventional processing steps. The sub-threshold characteristics, saturation drain current and electrical stability under hot-carrier stress of the MOS devices were shown to be improved under suitable treatments. The mechanism of stress relief at the Si/oxynitride interface was proposed to account for the improvements
  • Keywords
    MOSFET; carrier mobility; dielectric thin films; hot carriers; interface states; ion beam effects; leakage currents; semiconductor device reliability; semiconductor-insulator boundaries; stability; 550 eV; Ar; NMOSFET; Si-SiNO; Si/oxynitride interface; backsurface Ar+ bombardment; electrical stability; hot-carrier stress; low-energy Ar ion beam; n-MOSFET; n-channel device; nitrided gate oxides; saturation drain current; stress relief mechanism; subthreshold characteristics; Argon; Degradation; Dielectrics; Hot carriers; MOS capacitors; MOSFET circuits; Nitrogen; Rapid thermal annealing; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
  • Conference_Location
    Penang
  • Print_ISBN
    0-7803-3388-8
  • Type

    conf

  • DOI
    10.1109/SMELEC.1996.616460
  • Filename
    616460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3491644