DocumentCode
349211
Title
Mismatch effects explained by the spectral model [MOS devices]
Author
Oehm, Jurgen ; Grunebaum, U. ; Schumacher, Klaus
Author_Institution
AG Mikroelektronik, Dortmund Univ., Germany
Volume
2
fYear
1999
fDate
5-8 Sep 1999
Firstpage
1055
Abstract
The currently available first order mismatch models cannot explain many of the observed effects. The physical modelling approach of the spectral model described in this paper gives a very precise description of actual mismatch behaviour in a closed form and leads to a deeper understanding. Together with small geometry considerations a very good prediction of mismatch effects for a wide range of layout structures can be obtained, which are verified by measurements
Keywords
MOS integrated circuits; MOSFET; integrated circuit layout; integrated circuit modelling; semiconductor device models; MOS devices; closed form; layout structures; mismatch effects; physical modelling approach; small geometry considerations; spectral model; Circuit noise; Circuit synthesis; Circuit topology; Convolution; Frequency; Geometry; MOSFETs; Semiconductor device modeling; Threshold voltage; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location
Pafos
Print_ISBN
0-7803-5682-9
Type
conf
DOI
10.1109/ICECS.1999.813415
Filename
813415
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