Optical properties of InGaN/GaN double heterostructures

Author

Mee Yi Ryu ; Eun-Joo Shin ; Jae Ho Song ; Sung Woong Park ; Phil Won Yu ; Nam Woong Song ; Joo In Lee ; Dongho Kim ; Eun Soon Oh ; Yong Jo Park ; Hyeong Soo Park ; Tae Ill Kim

Author_Institution

Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea

Volume

3

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

983

Abstract

Many fundamental optical properties of InGaN have not yet been fully understood. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InGaN compositional fluctuations. In this work, we have employed photoluminescence (PL), photoreflectance (PR), and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaN-GaN double heterostructures.

Keywords

III-V semiconductors; excitons; gallium compounds; indium compounds; photoluminescence; photoreflectance; reflectivity; semiconductor superlattices; time resolved spectra; InGaN compositional fluctuations; InGaN-GaN; InGaN-GaN double heterostructures; InGaN/GaN double heterostructures; fundamental optical properties; localised exciton recombination; optical transitions; photoluminescence; photoreflectance; potential minima; time-resolved photoluminescence measurements; Excitons; Gallium nitride; Laser excitation; Laser mode locking; Optical pumping; Photoluminescence; Pump lasers; Radiative recombination; Stimulated emission; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.817932

Filename

817932