40-Gb/s Transimpedance Amplifier in 0.18-μm CMOS Technology

Author

Jin, Jun-De ; Hsu, Shawn S H

Author_Institution

Dept. of Electr. Eng. & Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

520

Lastpage

523

Abstract

A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the measured S-parameters, a transimpedance gain of 51.0 dBΩ and a 3-dB bandwidth up to 30.5 GHz (~0.5 f_T) were observed. To the best of authors´ knowledge, the TIA presents the widest bandwidth and highest GBP/P_dc of 180.1 GHzΩ/mW among the published results with similar technologies. A new bandwidth enhancement technique, π-type inductor peaking (PIP), is proposed, which gives a bandwidth enhancement factor of 3.31 without disturbing the low-frequency gain. Under a 1.8 V supply voltage, the TIA consumes 60.1 mW with a chip area of 1.17 x 0.46 mm².

Keywords

CMOS integrated circuits; S-parameters; inductors; millimetre wave amplifiers; 0.18 micron; 1.8 V; 3 dB; 40 Gbit/s; 60.1 mW; CMOS technology; S parameters; TIA; bandwidth enhancement technique; pi-type inductor peaking; transimpedance amplifier; transimpedance gain; Bandwidth; CMOS technology; Capacitance; Circuits; Degradation; Gain measurement; Inductors; Optical fiber communication; Voltage; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307504

Filename

4099818