Title :
Modelling of multicellular microwave transistors using the scaling approach
Author :
Hajji, R. ; Kouki, A.B. ; Ghannouchi, F.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Montreal Polytech. Sch., Que., Canada
Abstract :
A systematic approach to the modelling of multicellular power transistors is presented. It is based on characterisation and identification (modelling) of the elementary cell of the transistor, and modelling of input and output interconnections using the physical mask of the device. This model enables the small-signal performance of heterojunction bipolar transistors (HBT) to be predicted precisely. The obtained multicell model has been validated by comparison of its predictions with experimental measurements on various HBTs having different numbers of elementary cells
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device models; heterojunction bipolar transistors; interconnections; mask; microwave transistors; multicell model; power transistors; scaling; small-signal characteristics; Circuits; Content addressable storage; Convergence; Fabrication; Heterojunction bipolar transistors; Linear predictive coding; MESFETs;
Conference_Titel :
Electrical and Computer Engineering, 1995. Canadian Conference on
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-2766-7
DOI :
10.1109/CCECE.1995.526602
