GaAs-AlGaAs based micro lasers emitting at 10 μm and 13 μm

Author

Gianordoli, S. ; Hvozdara, L. ; Strasser, G. ; Schrenk, W. ; Unterrainer, K. ; Gornik, E.

Volume

1

fYear

1999

fDate

1999

Firstpage

9

Abstract

The unipolar semiconductor lasers presented here are quantum cascade lasers (QCL). The lasing transition of the first QCLs occurs between 2 intersubband levels of 3-coupled quantum wells. Electrons are injected into the intersubband levels over a specially designed non-periodic superlattice. One period, consisting of injector and coupled quantum wells is repeated typically 30 times and acts as gain region. Besides coupled quantum wells a periodic or chirped superlattice can act as gain medium. In these miniband lasers the radiative transition takes place between two minibands of a periodic superlattice

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser transitions; microcavity lasers; quantum well lasers; semiconductor superlattices; 10 mum; 13 mum; GaAs-AlGaAs; GaAs-AlGaAs based micro lasers; chirped superlattice; coupled quantum wells; gain medium; intersubband levels; lasing transition; miniband lasers; non-periodic superlattice; periodic superlattice; quantum cascade lasers; radiative transition; unipolar semiconductor lasers; Chemical lasers; Electrons; Gallium arsenide; Laser modes; Laser transitions; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Superlattices; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.813450

Filename

813450