DocumentCode :
349240
Title :
GaAs-AlGaAs based micro lasers emitting at 10 μm and 13 μm
Author :
Gianordoli, S. ; Hvozdara, L. ; Strasser, G. ; Schrenk, W. ; Unterrainer, K. ; Gornik, E.
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
9
Abstract :
The unipolar semiconductor lasers presented here are quantum cascade lasers (QCL). The lasing transition of the first QCLs occurs between 2 intersubband levels of 3-coupled quantum wells. Electrons are injected into the intersubband levels over a specially designed non-periodic superlattice. One period, consisting of injector and coupled quantum wells is repeated typically 30 times and acts as gain region. Besides coupled quantum wells a periodic or chirped superlattice can act as gain medium. In these miniband lasers the radiative transition takes place between two minibands of a periodic superlattice
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared sources; laser transitions; microcavity lasers; quantum well lasers; semiconductor superlattices; 10 mum; 13 mum; GaAs-AlGaAs; GaAs-AlGaAs based micro lasers; chirped superlattice; coupled quantum wells; gain medium; intersubband levels; lasing transition; miniband lasers; non-periodic superlattice; periodic superlattice; quantum cascade lasers; radiative transition; unipolar semiconductor lasers; Chemical lasers; Electrons; Gallium arsenide; Laser modes; Laser transitions; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Superlattices; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-5634-9
Type :
conf
DOI :
10.1109/LEOS.1999.813450
Filename :
813450
Link To Document :
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