Noise Immunity Enhanced 625V High-Side Driver

Author

Jong Tae Hwang ; Moon Sang Jung ; Jin Sung Kim ; Dong Hwan Kim

Author_Institution

Power Conversion Team, Fairchild Semicond., Gyeonggi-do

fYear

2006

fDate

19-21 Sept. 2006

Firstpage

572

Lastpage

575

Abstract

A high-side driver has a common-mode dv/dt noise cancellation circuit with V/I and I/V conversion technique to achieve the stable operation up to dv/dt=60V/ns and -10V of allowable negative output voltage at 15V supply. To prevent the malfunction due to the pulsating noise on driver´s supply voltage, the BiCMOS based logic circuit is incorporated. This circuit guarantees malfunction-free operation up to +68Vp and -50Vp of the pulse noises. The chip is implemented by using 625V BCDMOS process based on new junction termination technology

Keywords

BiCMOS logic circuits; driver circuits; integrated circuit noise; interference suppression; -10 V; 15 V; 625 V; BCDMOS process; BiCMOS based logic circuit; I/V conversion technique; V/I conversion technique; common-mode cancellation circuit; dv/dt noise cancellation circuit; high-side driver; junction termination technology; noise immunity; CMOS logic circuits; Circuit noise; Driver circuits; Inverters; Logic circuits; Noise cancellation; Noise robustness; Pulse transformers; Semiconductor device noise; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European

Conference_Location

Montreux

ISSN

1930-8833

Print_ISBN

1-4244-0303-0

Type

conf

DOI

10.1109/ESSCIR.2006.307489

Filename

4099831