Titanium disilicide as hot side metallization layer for thermoelectric generators

As the efficiency of thermoelectric generators increases with growing temperature difference, new contact materials on the hot side of the device are needed to replace soldering techniques. In this paper titanium disilicide (TiSi₂) is introduced as thermally stable interconnect of p- and n-type legs of thermoelectric generators. TiSi₂ is formed by sputtering of titanium and thermal silicidation. The resistivity of the TiSi₂ metallization is reduced using rapid thermal annealing steps. Test devices consisting of highly doped silicon are stable up to at least 600 °C. The results are transferrable to other thermoelectric materials to improve the thermoelectric performance of the device.