Title :
Coupling of InGaN quantum well photoluminescence to silver surface plasmons
Author :
Gontijo, I. ; Boroditsky, M. ; Yablonovitch, E. ; Keller, S. ; Mishra, U.K. ; Den Baars, Steve P. ; Krames, M.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The coincidence of surface plasmon energy on silver and the GaN bandgap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. External efficiency of LEDs could be improved by this process
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; spontaneous emission; surface plasmons; Ag; GaN; GaN bandgap; InGaN quantum well photoluminescence; LEDs; external efficiency; metal surface plasmons; semiconductor spontaneous emission; silver surface plasmons; surface plasmon energy; Electrons; Frequency; Gallium nitride; Materials science and technology; Optical reflection; Photoluminescence; Photonic band gap; Plasmons; Silver; Spontaneous emission;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.813496
