DocumentCode
349290
Title
Quasi-phase-matched devices using sublattice-reversed semiconductor heterostructures
Author
Ito, Ryoichi ; Koh, Shinji ; Kondo, Takashi
Author_Institution
Dept. of Phys., Meiji Univ., Kawasaki, Japan
Volume
1
fYear
1999
fDate
1999
Firstpage
119
Abstract
We propose a novel technique to realize quasi-phase-matched structures using compound semiconductors based on sublattice-reversal epitaxy, in which the sublattices of the zinc-blende structure are interchanged in the process of epitaxy. Sublattice-reversal epitaxy has been demonstrated in GaAs-Si-GaAs (100), GaP-Si-GaP (100), GaAs-Ge-GaAs (100) and GaAs-Ge-GaAs (111) systems
Keywords
molecular beam epitaxial growth; optical materials; optical phase matching; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; GaAs-Ge-GaAs; GaAs-Si-GaAs; GaP-Si-GaP; compound semiconductors; quasi-phase-matched devices; sublattice-reversal epitaxy; sublattice-reversed semiconductor heterostructures; zinc-blende structure; Atomic layer deposition; Epitaxial growth; Frequency conversion; Gallium arsenide; Molecular beam epitaxial growth; Nonlinear optical devices; Nonlinear optics; Optical films; Optical modulation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.813507
Filename
813507
Link To Document