D-band amplifier using metamorphic HEMT technology

Author

Baek, Yong-Hyun ; Choi, Seok-Gyu ; LEE, Sang-Jin ; Baek, Tae-Jong ; Han, Min ; Oh, Jung-Hun ; Cho, Hui-chul ; Rhee, Eung-Ho ; Rhee, Jin-Koo

Author_Institution

Millimeter-wave INnovation Technol. Res. center (MINT), Dongguk Univ., Seoul

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we successfully demonstrated the D-band MMIC amplifiers based on 0.1 mum InGaAs/InAlAs/GaAs MHEMT which has two fingers of 30 mum gate width. The device exhibited a cut-off frequency (f_T) of 189 GHz, and a maximum oscillation frequency (f_max) of 334 GHz. The D-band MMIC amplifier exhibited a good RF gains of 7.8 dB at a frequency of 110 GHz. Actually, the D-band MMIC amplifiers exhibited the S₂₁ gains of at 140 GHz in Momentum simulation. We try to measure a frequency range of 110-140 GHz because our measurement equipment can measure in a frequency range of 0.1-110 GHz. Proceeding from these results, we expect satisfactory results in S₂₁ gain performance at 140 GHz.

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; D-band MMIC amplifiers; GaAs; InAlAs; InGaAs; MHEMT; frequency 0.1 GHz to 110 GHz; frequency 110 GHz to 140 GHz; frequency 189 GHz; frequency 334 GHz; metamorphic HEMT technology; Cutoff frequency; Fingers; Frequency measurement; Gallium arsenide; Indium compounds; Indium gallium arsenide; MMICs; Radio frequency; Radiofrequency amplifiers; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958639

Filename

4958639