Multi-Gate MOSFET Design

Author

Knoblinger, G. ; Pacha, C. ; Kuttner, F. ; Marshall, A. ; Russ, C. ; Haibach, P. ; Patruno, P. ; Schulz, T. ; Arnim, K.V. ; Engelstaedter, J.P. ; Bertolissi, L. ; Xiong, W. ; Cleavelin, C.R. ; Schruefer, K.

Author_Institution

Infineon Technol. Austria, Villach

fYear

2006

fDate

Sept. 2006

Firstpage

65

Lastpage

68

Abstract

In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered

Keywords

MOSFET; electrostatic discharge; integrated circuit design; radiofrequency integrated circuits; ESD issues; analog circuits; circuit design issues; circuit technology; digital circuits; midgap gate electrode materials; multi-gate MOSFET; output conductance improvement; self heating; Analog circuits; Circuit synthesis; Conducting materials; Digital circuits; Electrodes; Electrostatic discharge; FETs; Heating; MOSFET circuits; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European

Conference_Location

Montreux

ISSN

1930-8876

Print_ISBN

1-4244-0301-4

Type

conf

DOI

10.1109/ESSDER.2006.307639

Filename

4099857